%0 Journal Article
%T HIGH PERFORMANCE BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUIT<br>高性能双极型集成电路晶体管
%A Fu Xinghua
%A Chen Junning
%A Tong Qinyi
%A <br>傅兴华
%A 陈军宁
%A 童勤义
%J 电子与信息学报
%D 1993
%I 
%X The state-of-the-art technologies of bipolar transistors for integrated circuit, in which bipolar transistors based on bulk silicon, silicon-on insulator and SiGe stained layer are included, are discussed.
%K Silicon bipolar integrated circuit
%K SOI
%K SiGe/Si heterostruccure
%K HBT
%K Isolation technology<br>硅双极型集成电路
%K 绝缘介质上硅膜(SOI)
%K 硅锗异质结
%K 异质结双极型晶体管(HBT)
%K 隔离技术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=255A9061C45FDD5B&yid=D418FDC97F7C2EBA&vid=23CCDDCD68FFCC2F&iid=B31275AF3241DB2D&sid=250DF325A002B9CC&eid=D33D61F62E4C72A7&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=50