%0 Journal Article
%T STUDY OF THE DIFFUSION OF Zn INTO Ge<br>Zn在Ge中扩散的研究
%A Zhang Guicheng
%A <br>张桂成
%J 电子与信息学报
%D 1987
%I 
%X In this report the diffusion of Zn into Ge is investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using Zn as the diffusion source. The xj-t1/2 and C-1/T has been given. The influence of the source temperature on rhe curface micro-graph has been given. It is found that using two-temperature process a smooth surface layer can be obtained.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=6974813D2888D0E3&yid=9C2DB0A0D5ABE6F8&vid=9CF7A0430CBB2DFD&iid=38B194292C032A66&sid=7ABC4505E3960D2B&eid=DC330B09A33F1455&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=5