%0 Journal Article
%T MONTE CARLO SIMULATION AND COMPUTATION OF SINGLE CHANNEL MULTIPLYING PARAMETERS IN MCP<br>MCP中单通道电子倍增参数的Monte Carlo模拟计算
%A Wei Yayi
%A <br>韦亚一
%J 电子与信息学报
%D 1992
%I 
%X Monte Carlo method is used to simulate the whole courses of electronictransportation, collision and secondary emission in a single channel of MCP. The energy distribution formula of secondary electron of MCP is derived. Each parameter of a single channel in MCP is calculated and discussed.
%K MCP (microchannel plate)
%K Monte Carlo method
%K Secondary electron emission
%K Electron multiplying<br>微通道板
%K Monte
%K Carlo方法
%K 次级电子发射
%K 电子倍增
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=81A39ADA20581257&yid=F53A2717BDB04D52&vid=F3583C8E78166B9E&iid=CA4FD0336C81A37A&sid=228A710F49B6CE58&eid=E203FB1A272C9DD2&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=1&reference_num=9