%0 Journal Article
%T THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD<br>i-GaAlAs/GaAs HIGFETs器件参数的有限元分析
%A Gu Cong
%A Wang Dening
%A Wang Weiyuan
%A <br>顾聪
%A 王德宁
%A 王渭源
%J 电子与信息学报
%D 1992
%I 
%X Two dimensional numerical simulation and analysis for the static state characteristics of i-GaAlAs/i-GaAs HIGFETs by using finite-element method are presented. Some improvements have been made on the boundary conditions, mesh generation and estimation of initial values in the program. The electron concentration and potential distribution etc. inside the HIGFETs are computed. The results of its output characteristics are in good agreement with the experimental data.
%K HIGFETs
%K Finite-element method
%K 2-D numerical simulation<br>绝缘栅场效应晶体管
%K 有限元分析
%K 二维数值模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=63B0DE9B130201F7&yid=F53A2717BDB04D52&vid=F3583C8E78166B9E&iid=94C357A881DFC066&sid=64808317C39DF331&eid=D8414BC1307BF1A3&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8