%0 Journal Article
%T COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE<br>双漂移(P+PNN+)雪崩二极管的计算机辅助分析
%A Fang Xizeng
%A Song Wenmiao
%A <br>方希曾
%A 宋文淼
%J 电子与信息学报
%D 1986
%I 
%X The results calculated by computer for the double-drift-region IMPATT diode on 3 mm waveband are reported. A comparison between single-drift and double-drift diodes is presented. The advantage of double-drift devices in respect to power output and efficiency is given. At the same time, effects of doping profile, current density and RF voltage on the performences of these devices are investigated. The theoretical data for design of double-drift IMPATT oscillator and amplifier on 8 mm waveband is also given.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=02E8C3EB7896800E60C4C8E73022E2C4&yid=4E65715CCF57055A&vid=5D311CA918CA9A03&iid=B31275AF3241DB2D&sid=1FF3CD54EFC256A1&eid=B941678158018439&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=5