%0 Journal Article
%T SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE<br>BF2+注入多晶硅栅的SIMS分析
%A Liu Jialu
%A Zhang Tingqing
%A Zhang Zhengxuan
%A Zhao Yuanfu
%A <br>刘家璐
%A 张廷庆
%A 张正选
%A 赵元富
%J 电子与信息学报
%D 1994
%I 
%X The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BF+2 implanted Si-gate with an energy of 80keV and doses of 2×1015 and 5×1015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects.
%K BF+2&prev_q=+2')">BF+2" target="_blank">+2')">BF+2
%K Si-gate
%K Ion implantation
%K SIMS<br>二氟化硼
%K 硅栅
%K 离子注入
%K 二次离子质谱仪
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=34A5968071667083A74D859C93FE9EE9&yid=3EBE383EEA0A6494&vid=7801E6FC5AE9020C&iid=94C357A881DFC066&sid=1918ADDC93A85779&eid=B34BDD6A690A04C0&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=7