%0 Journal Article
%T 1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS<br>集成运算放大器参数时漂的1/f噪声预测方法
%A Zhuang Yiqi
%A Sun Qing
%A Hou Xun
%A <br>庄奕琪
%A 孙青
%A 侯洵
%J 电子与信息学报
%D 1996
%I 
%X It is shown from the accelerated lifetime test and noise measurement for integrated operational amplifiers that if their failure is caused by the drift of input bias current or input offset current, the drift is strongly correlated with 1/f noise current in these devices, and both are proportional approximately. In the mechanism analysis, the drift may be attributed to the slow capture effect of oxide traps, which are 1/f noise sources, on the electrons in silicon. Therefore, 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the long term instability of integrated operational amplifiers.
%K 1/f noise
%K Operational amplifier
%K Drift
%K Oxide trap<br>1/f噪声
%K 运算放大器
%K 漂移
%K 氧化层陷阱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=56CFC6D16D79196E629B8D36E30A8674&yid=8A15F8B0AA0E5323&vid=13553B2D12F347E8&iid=E158A972A605785F&sid=238BD7580EFCC5AE&eid=8CCD0401CC9AE432&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=3