%0 Journal Article
%T TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS<br>VDMOS器件二维数值模拟和典型参数优化分析
%A Liu Xiaomei Hu Rongxiang Luo Jinsheng
%A <br>刘晓梅
%A 胡蓉香
%A 罗晋生
%A 李中江
%J 电子与信息学报
%D 1991
%I 
%X A software for numerical simulation of power MOSFET, called TDSPM, is developed. In the program, DDM model is used. The velocity-electrical field characteristics and generation/recombination effect in high electrical field region for electrons are specially considered for simulating device performances at high voltage including the case of breakdown. The entirely coupled method is used. To enlarge the increment of applied voltage, the truncation method is employed. With the truncation method, the increment of drain-to-source of 100-200V can be used in saturation region. TDSPM is applied to simulation of VDMOS. The output characteristics are simulated. Internal distributions of some physical parameters are calculated and investigated. Special emphasis is placed on breakdown. At last the software is applied to optimization of VDMOS.
%K Power Transistor
%K MOSFET
%K Numerical simulation
%K Breakdown<br>功率晶体管
%K MOS场效应晶体管
%K 数值模拟
%K 击穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=EBB8F4DB99334425&yid=116CB34717B0B183&vid=FC0714F8D2EB605D&iid=B31275AF3241DB2D&sid=54E527C5B72E59D8&eid=23F919F7BAF87909&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8