%0 Journal Article
%T MEASUREMENT OF THE DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY<br>光电导归一化法测量α-Si:H隙态密度
%A Xu Le
%A Liu Qiyi
%A <br>徐乐
%A 刘启一
%J 电子与信息学报
%D 1986
%I 
%X The spectra of the optical absorption conficient in the low absorption region are obtained by using a normalization procedure for the photoconductivity spectra. The results are explained in terms of optieal transitions of electrons from loealized states in exponential valence-band tail and in danglihg bond states. 1.0 eV below the conduction-band edge to extended states above the conduction-band edge. Then the density of the gap states below the Fermi energy EF is abtained. From the investigation of recombination kinetics, the average density of the gap states in the range of (EFn-EF) is obtained. Then the density of the gap states above the Fermi energy EF is obtained. It indicates that the width of the conduction-band tail is narrower than that of valence-band tail.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=EA36FFC40373F5F9&yid=4E65715CCF57055A&vid=5D311CA918CA9A03&iid=38B194292C032A66&sid=F9F74EC1AA08A7B9&eid=8B59EA573021D671&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=14