%0 Journal Article
%T CHROMELESS PHASE SHIFT MASK PHOTOLITHOGRAPHY<br>无铬相移掩模光刻技术
%A Feng Boru
%A Chen Baoqin
%A <br>冯伯儒
%A 陈宝钦
%J 光子学报
%D 1996
%I 
%X In the paper,we describe the basic principles and primary types of phase shift masks (PSM) used for increasing resolution.Manufacturing methods of chromeless PSM are presented. Exposure experiment and experimental results are given.Practical resolution 0.5 m has been gained with g line(436nm)10x reduction stepper of NA 0.28.
%K Phase-shifting mask
%K Chromeless phase-shifting mask
%K Photolithography<br>相移掩膜
%K 无铬
%K 光刻技术
%K 大规模集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=7A99AE8C04B3C0532C06F6857597462C&yid=8A15F8B0AA0E5323&vid=C5154311167311FE&iid=E158A972A605785F&sid=A5B34D9E8FDA439A&eid=2E01F39B6CBD53DE&journal_id=1004-4213&journal_name=光子学报&referenced_num=2&reference_num=1