%0 Journal Article
%T InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage<br>
%A Zhang Xiao-Bin
%A Wang Xiao-Liang
%A Xiao Hong-Ling
%A Yang Cui-Bai
%A Hou Qi-Feng
%A Yin Hai-Bo
%A Chen Hong
%A Wang Zhan-Guo
%A <br>
%J 中国物理 B
%D 2011
%I 
%X In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (Voc) of the device are 0.7 mA/cm2, 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of Voc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing Voc of an In-rich InxGa1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.
%K InGaN
%K solar cell
%K multiple quantum wells<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=C8A6B3BD7E957AB13B0034E3D2726D66&yid=9377ED8094509821&vid=A04140E723CB732E&iid=0B39A22176CE99FB&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=20