%0 Journal Article
%T Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure
%A 叶超
%A 宁兆元
%J 中国物理 B
%D 2010
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=8BC4B053386BA77634819748F315C0DB&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=94C357A881DFC066&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=26