%0 Journal Article
%T Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study<br>
%A Bi Zhi-Wei
%A Hu Zhen-Hu
%A Mao Wei
%A Hao Yue
%A Feng Qian
%A Cao Yan-Rong
%A Gao Zhi-Yuan
%A Zhang Jin-Cheng
%A Ma Xiao-Hu
%A Chang Yong-Ming
%A Li Zhi-Ming
%A Mei Nan
%A <br>
%J 中国物理 B
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=F08039D3DCD3DAED173BBE1D7A1CC966&yid=9377ED8094509821&vid=A04140E723CB732E&iid=5D311CA918CA9A03&sid=CF17B5E3A651FB55&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=14