%0 Journal Article
%T Electroluminescence of double-doped diamond thin films<br>
%A Zhang Shi
%A Wang Xiao-Ping
%A Wang Li-Jun
%A Zhu Yu-Zhuan
%A Mei Cui-Yu
%A Liu Xin-Xin
%A Li Huai-Hui
%A Gu Ying-Zhan
%A <br>
%J 中国物理 B
%D 2010
%I 
%X A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m- 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
%K electroluminescence
%K double-doped diamond thin film
%K microwave plasma chemical vapour deposition
%K electron beam vapour deposition<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=9934CA8AE123943838976D58FB590C7B&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=9CF7A0430CBB2DFD&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=23