%0 Journal Article
%T The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses<br>
%A Hu Xiao-Long
%A Zhang Jiang-Yong
%A Shang Jing-Zhi
%A Liu Wen-Jie
%A Zhang Bao-Ping
%A <br>
%J 中国物理 B
%D 2010
%I 
%X This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.
%K exciton-longitudinal-optical-phonon
%K InGaN/GaN single quantum well
%K GaN cap layer
%K Huang-Rhys factor<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=05AE081675C468D5FF4ED520C9CCA1A6&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=708DD6B15D2464E8&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=16