%0 Journal Article
%T An interconnect width and spacing optimization model considering scattering effect<br>
%A Zhu Zhang-Ming
%A Wan Da-Jing
%A Yang Yin-Tang
%A <br>
%J 中国物理 B
%D 2010
%I 
%X As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.
%K scattering effect
%K curve fitting
%K interconnection line dimensions
%K nanometer integrated circuits<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=34EB95566FC72E25300DB013B43D9C52&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=9CF7A0430CBB2DFD&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=23