%0 Journal Article
%T Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress<br>
%A Ma Xiao-Hu
%A Ma Ji-Gang
%A Yang Li-Yuan
%A He Qiang
%A Jiao Ying
%A Ma Ping
%A Hao Yue
%A <br>
%J 中国物理 B
%D 2011
%I 
%X The kink effect is studied in an AlGaN/GaN high electron mobility transistor by measuring DC performance during fresh, short-term stress and recovery cycle with negligible degradation. Vdg plays an assistant role in detrapping electrons and short-term stress results in no creation of new category traps but an increase in number of active traps. A possible mechanism is proposed that electrical stress supplies traps with the electric field for activation and when device is under test field-assisted hot-electrons result in electrons detrapping from traps, thus deteriorating the kink effect. In addition, experiments show that the impact ionization is at a relatively low level, which is not the dominant mechanism compared with trapping effect. We analyse the complicated link between the kink effect and stress bias through groups of electrical stress states: Vds=0-state, off-state, on-state (on-state with low voltage, high-power state, high field state). Finlly, a conclusion is drawn that electric field brings about more severe kink effect than hot electrons. With the assistance of electric field, hot electrons tend to be possible to modulate the charges in deep-level trap.
%K high electron mobility transistors
%K AlGaN/GaN
%K kink effect
%K stress states<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=3C89E4D08EC9A624E2E0E92A6B05F40E&yid=9377ED8094509821&vid=A04140E723CB732E&iid=B31275AF3241DB2D&sid=48399BBDDD50EE16&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=14