%0 Journal Article
%T Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents
%A 邢杰
%A 郭尔佳
%A 温娟
%J 中国物理 B
%D 2011
%I 
%X Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current--voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p--n heterojunction.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=7B6C0D6816013BF4C4283472E4D21494&yid=9377ED8094509821&vid=A04140E723CB732E&iid=38B194292C032A66&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=19