%0 Journal Article
%T Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering<br>
%A Tan Yong-Sheng
%A Fang Ze-Bo
%A Chen Wei
%A He Pi-Mo
%A <br>
%J 中国物理 B
%D 2010
%I 
%X This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.
%K Eu-doped ZnO films
%K ferromagnetism
%K radio-frequency magnetic sputtering<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=36749F25962E378E5BF0409D0350E555&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=9CF7A0430CBB2DFD&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=27