%0 Journal Article
%T Parameter analysis for gate metal—oxide—semiconductor structures of ion-implanted 4H silicon carbide metal—semiconductor field-effect transistors
%A 王守国
%A 张义门
%A 张玉明
%J 中国物理 B
%D 2010
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=A131EB90BD0264CE0B50628797D477EF&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=9CF7A0430CBB2DFD&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=29