%0 Journal Article
%T Simulation of the light extraction efficiency of nanostructure light-emitting diodes<br>
%A Zhu Ji-Hong
%A Wang Liang-Ji
%A Zhang Shu-Ming
%A Wang Hui
%A Zhao De-Gang
%A Zhu Jian-Jun
%A Liu Zong-Shun
%A Jiang De-Sheng
%A Yang Hui
%A <br>
%J 中国物理 B
%D 2011
%I 
%X The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.
%K light extraction efficiency
%K InGaN/GaN multiple quantum well
%K nanostructure<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=DEF413115F4CED2B9799B6A0E72A42E4&yid=9377ED8094509821&vid=A04140E723CB732E&iid=DF92D298D3FF1E6E&sid=C771A92011C0F21D&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=19