%0 Journal Article
%T Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs<br>
%A Jiang Xiang-Wei
%A Li Shu-Shen
%A <br>
%J 中国物理 B
%D 2012
%I 
%X By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.
%K quantum confinement
%K tunneling
%K metal-oxide-semiconductor field-effect transistors
%K linear combination of bulk band<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=A530BD0973665D3989F9488BD74773D8&yid=99E9153A83D4CB11&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=8E3E2BC8C3B6DE67&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=34