%0 Journal Article
%T The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure<br>
%A Zhao Yuan-Yuan
%A Qiao Ming
%A Wang Wei-Bin
%A Wang Meng
%A Zhang Bo
%A <br>
%J 中国物理 B
%D 2012
%I 
%K field implant technology
%K back gate punch-through
%K surface channel punch-through
%K avalanche breakdown<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=AF837C3964F7310F847814589E189C98&yid=99E9153A83D4CB11&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=163FB556DE1EB543&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=22