%0 Journal Article
%T An improvement to computational efficiency of the drain current model for double-gate MOSFET<br>
%A Zhou Xing-Ye
%A Zhang Jian
%A Zhou Zhi-Ze
%A Zhang Li-Ning
%A Ma Chen-Yue
%A Wu Wen
%A Zhao Wei
%A Zhang Xing
%A <br>
%J 中国物理 B
%D 2011
%I 
%X As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.
%K computational efficiency
%K compact model
%K double-gate
%K MOSFET<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=49438F68A18A4524DB89E09489981E4C&yid=9377ED8094509821&vid=A04140E723CB732E&iid=9CF7A0430CBB2DFD&sid=E75D04569D224C99&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=18