%0 Journal Article
%T Flat-band voltage shift in metal-gate/high-k/Si stacks<br>
%A Huang An-Ping
%A Zheng Xiao-Hu
%A Xiao Zhi-Song
%A Yang Zhi-Chao
%A Wang Mei
%A Paul K Chu
%A Yang Xiao-Dong
%A <br>
%J 中国物理 B
%D 2011
%I 
%X In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.
%K flat-band voltage shift
%K Vfb roll-off
%K metal gate
%K high-k dielectrics<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=49438F68A18A45245E6794566BAC8864&yid=9377ED8094509821&vid=A04140E723CB732E&iid=9CF7A0430CBB2DFD&sid=0C0ADC00153436B5&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=56