%0 Journal Article
%T The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT<br>
%A Mao Wei
%A Yang Cui
%A Hao Yue
%A Ma Xiao-Hu
%A Wang Chong
%A Zhang Jin-Cheng
%A Liu Hong-Xi
%A Bi Zhi-Wei
%A Xu Sheng-Rui
%A Yang Lin-An
%A Yang Ling
%A Zhang Kai
%A Zhang Nai-Qian
%A Pei Yi
%A <br>
%J 中国物理 B
%D 2011
%I 
%K HfO2 insulator
%K HfO2-FP-HEMT
%K FP efficiency
%K proportional design<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=49438F68A18A4524D10CE5F8ACBA9D65&yid=9377ED8094509821&vid=A04140E723CB732E&iid=9CF7A0430CBB2DFD&sid=944FCEB2742CACB6&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=22