%0 Journal Article
%T The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition<br>
%A Le Ling-Cong
%A Zhao De-Gang
%A Wu Liang-Liang
%A Deng Yi
%A Jiang De-Sheng
%A Zhu Jian-Jun
%A Liu Zong-Shun
%A Wang Hui
%A Zhang Shu-Ming
%A Zhang Bao-Shun
%A Yang Hui
%A <br>
%J 中国物理 B
%D 2011
%I 
%X In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.
%K X-ray diffraction|metalorganic chemical vapour deposition|nitrides<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=B8035D61C1BAF40F5FFFAC81E74BA699&yid=9377ED8094509821&vid=A04140E723CB732E&iid=59906B3B2830C2C5&sid=4F69C65011472CEB&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=17