%0 Journal Article
%T Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
%A 王公堂
%A 薛成山
%A 杨兆柱
%J 中国物理 B
%D 2008
%I 
%X This paper reports that β-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100nm to 200\,nm and lengths typically up to 2\mum. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.
%K β--Ga2O3
%K nanorods
%K vapour--solid
%K mechanism
%K V
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=F61F377D4670F9D482C5DE34F3180942&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=E158A972A605785F&sid=3EF235AF78C45721&eid=DF8B97D5075E2D12&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0