%0 Journal Article
%T Spin-dependent transport for a two-dimensional electron gas with magnetic barriers<br>
%A Wang Hai-Yan
%A Duan Zi-Gang
%A Liao Wen-Hu
%A Zhou Guang-Hui
%A <br>
%J 中国物理 B
%D 2010
%I 
%X The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W=81.3 and 243.9~nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
%K semiconductor 2DEG
%K magnetic barriers
%K spin-dependent transport<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=11F307050A937EBFEB81E0ED6EF4906A&yid=140ECF96957D60B2&vid=2A8D03AD8076A2E3&iid=38B194292C032A66&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=25