%0 Journal Article
%T Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes<br>
%A Liang De-Chun
%A An Qi
%A Jin Peng
%A Li Xin-Kun
%A Wei Heng
%A Wu Ju
%A Wang Zhan-Guo
%A <br>
%J 中国物理 B
%D 2011
%I 
%X This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.
%K InAlGaAs quantum dot
%K superluminescent diode
%K optical coherence tomography
%K short wavelength<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=3D120F67FFBE1E377C13CB413CFAD72C&yid=9377ED8094509821&vid=A04140E723CB732E&iid=F3090AE9B60B7ED1&sid=C60238E8B35B9E9E&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=23