%0 Journal Article
%T Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer<br>
%A Zheng Zhi-Wei
%A Huo Zong-Liang
%A Zhu Chen-Xin
%A Xu Zhong-Guang
%A Liu Jing
%A Liu Ming
%A <br>
%J 中国物理 B
%D 2011
%I 
%X In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.
%K charge trapping flash
%K blocking layer
%K stack<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=3D120F67FFBE1E3715D9DDB487EC324B&yid=9377ED8094509821&vid=A04140E723CB732E&iid=F3090AE9B60B7ED1&sid=7D58D856BC36DA35&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=9