%0 Journal Article %T Impact of substrate bias on radiation-induced edge effects in MOSFETs
%A Hu Zhi-Yuan %A Liu Zhang-Li %A Shao-Hu %A Zhang Zheng-Xuan %A Ning Bing-Xu %A Chen Ming %A Bi Da-Wei %A Zou Shi-Chang %A
%J 中国物理 B %D 2011 %I %X This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics. %K ionizing radiation %K shallow trench isolation %K trapped charge %K total dose effects
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=B8035D61C1BAF40F6D4AA5EA56100A1B&yid=9377ED8094509821&vid=A04140E723CB732E&iid=59906B3B2830C2C5&sid=33C67368D1E94553&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=12