%0 Journal Article
%T Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53a0.47s/InAs resonant tunneling diodes on quantum well widths<br>
%A Zhang Yang
%A Zhang Yu
%A Zeng Yi-Ping
%A <br>
%J 中国物理 B
%D 2008
%I 
%X This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunneling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunneling diodes are continually decreasing with increasing well width.
%K resonant tunneling diode
%K molecular beam epitaxy<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=CEE9DE7A264D58F2772FF0C174D19A01&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=59906B3B2830C2C5&sid=1A34CC25D9B167D5&eid=DA2A6D8FFD4F5F89&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0