%0 Journal Article
%T Structure, ferroelectric and dielectric properties of Bi2WO6 with different bismuth content<br>
%A Wang Xiao-Juan
%A Gong Zhi-Qiang
%A Zhu Jun
%A Chen Xiao-Bing
%A <br>
%J 中国物理 B
%D 2009
%I 
%X This paper reports that the Bi2WO6 ferroelectric ceramics with excess Bi2O3 of 0.0, 2.0, 3.5 and 5.0wt.% of the stoichiometric composition are prepared by the conventional solid-state reaction method. Their microstructure, ferroelectric properties, the concentration and mobility of the defects have been analysed systematically. With increasing Bi content, the remnant polarization decreases, and the broken-down voltage increases. The optimum Bi excess, 3.5, lowers the oxygen vacancy concentration, while further Bi-addition brings about more defects. The activation energies fitted from cole-cole plots are 0.97eV, 1.07eV, 1.18eV, and 1.33eV, respectively. This suggests that the mobility of the defects is weakened by Bi-addition, which may be due to the increase of the ratio of the number of Bi2O2 layers to that of the perovskite blocks.
%K ferroelectric ceramics
%K Bi2WO6
%K oxygen vacancy
%K x-ray photoemission spectroscopy<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=1EF9799F55A0AED711F60068E3CECCCE&yid=DE12191FBD62783C&vid=13553B2D12F347E8&iid=0B39A22176CE99FB&sid=EAF6504CC0383BDF&eid=AF407E3178C0B145&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0