%0 Journal Article
%T The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment<br>
%A Feng Qian
%A Tian Yuan
%A Bi Zhi-Wei
%A Yue Yuan-Zheng
%A Ni Jin-Yu
%A Zhang Jin-Cheng
%A Hao Yue
%A Yang Lin-An
%A <br>
%J 中国物理 B
%D 2009
%I 
%X This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT), with Al2O3 deposited by atomic layer deposition. The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3/AlGaN interface was pretreated by N2 plasma. Furthermore, effects of N2 plasma pretreatment on the electrical properties of the AlGaN/Al2O1-x interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.
%K Al2O3/AlGaN/GaN MISHEMT
%K atomic layer deposition
%K N2 plasma pretreatment<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=9F89A2EA349181A2507D6E5A56B96961&yid=DE12191FBD62783C&vid=13553B2D12F347E8&iid=DF92D298D3FF1E6E&sid=A2A361E8179A54A7&eid=EAEB02CD348FC8D1&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0