%0 Journal Article
%T Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N''-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide<br>
%A Li Jian-Feng
%A Chang Wen-Li
%A Ou Gu-Ping
%A Zhang Fu-Jia
%A <br>
%J 中国物理 B
%D 2009
%I 
%X Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18~cm2/(V.s) and field-effect electron mobility of 0.031~cm2/(V.s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.
%K organic heterojunction transistors
%K ambipolar
%K air-stable
%K high electron affinity<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=E3225A846F5C7F43D1AFF1F4BAF61664&yid=DE12191FBD62783C&vid=13553B2D12F347E8&iid=DF92D298D3FF1E6E&sid=A7D7F6396AB1F308&eid=9E8466146226574B&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0