%0 Journal Article
%T Electrical and optical characteristics of vanadium in 4H-SiC
%A Wang Chao
%A Zhang Yi-Men
%A Zhang Yu-Ming
%A <br>王 超
%A 张义门
%A 张玉明
%J 中国物理 B
%D 2007
%I 
%X A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×106\Omega .cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC-1.1eV.
%K semi-insulating 4H-SiC
%K vanadium ion implantation
%K annealing
%K activation energy<br>4H-SiC膜层
%K 钒离子
%K 电学性质
%K 光学特性
%K 退火4H-SiC
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51EC29F0F1FE47964D5E77B739481C17&yid=A732AF04DDA03BB3&vid=7801E6FC5AE9020C&iid=94C357A881DFC066&sid=656BC79BFC7F0F4B&eid=ED51333671C94F12&journal_id=1009-1963&journal_name=中国物理&referenced_num=2&reference_num=18