%0 Journal Article
%T The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide
%A Guo Hui
%A Zhang Yi-Men
%A Qiao Da-Yong
%A Sun Lei
%A Zhang Yu-Ming
%A <br>郭 辉
%A 张义门
%A 乔大勇
%A 孙 磊
%A 张玉明
%J 中国物理 B
%D 2007
%I 
%X This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi$_{2}$/SiC structure are formed on N-wells created by N$^{ + }$ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi$_{2}$ films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance $\rho _{c}$ of NiSi contact to n-type 6H-SiC as low as 1.78$\times $10$^{ - 6}\Omega $cm$^{2}$ is achieved after a two-step annealing at 350~${^\circ}$C for 20 min and 950${^\circ}$C for 3 min in N$_{2}$. And 3.84$\times $10$^{ - 6}\Omega $cm$^{2}$ for NiSi$_{2}$ contact is achieved. The result for sheet resistance $R_{\rm sh}$ of the N$^{ + }$ implanted layers is about 1210$\Omega /\square$. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.
%K ohmic contact
%K silicon carbide
%K nickel silicide
%K N+ ion implantation<br>硅化镍
%K 欧姆触点
%K n型碳化硅
%K 制造
%K 能带
%K 带隙
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51EC29F0F1FE479634855A158D292F97&yid=A732AF04DDA03BB3&vid=7801E6FC5AE9020C&iid=B31275AF3241DB2D&sid=52BD3BD127FE3A27&eid=181DAA2DD1AE90C6&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=13