%0 Journal Article
%T Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers<br>Pseudo nanocrystal silicon induced .luminescence enhancement in a-Si/SiO2 multilayers
%A Han Pei-Gao
%A Ma Zhong-Yuan
%A Xia Zheng-Yue
%A Chen De-Yuan
%A Xu Jun
%A Qian Bo
%A Chen San
%A Li Wei
%A Huang Xin-Fan
%A Chen Kun-Ji
%A Feng Duan
%A <br>韩培高
%A 马忠元
%A 夏正月
%A 陈德媛
%A 徐骏
%A 钱波
%A 陈三
%A 李伟
%A 黄信凡
%A 陈坤基
%A 冯端
%J 中国物理 B
%D 2007
%I 
%X Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si\jz{.2mm}{:}H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773nm and 863nm, respectively. It is found that the PL band centred at 863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
%K nanometre Si
%K photoluminescence
%K Raman spectroscopy<br>伪纳米晶
%K 纳米硅
%K 光致发光
%K 非晶硅/二氧化硅多层膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51EC29F0F1FE4796D5A119E847F0B065&yid=A732AF04DDA03BB3&vid=7801E6FC5AE9020C&iid=94C357A881DFC066&sid=3FD5B2D1B84CE43E&eid=B240D359488D2362&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=18