%0 Journal Article
%T A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect<br>A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect
%A Ji Feng
%A Xu Jing-Ping
%A Lai Pui-To
%A <br>季峰
%A 徐静平
%A 黎沛涛
%J 中国物理 B
%D 2007
%I 
%X In this paper, a threshold voltage model for high-$k$ gate-dielectric metal--oxide--semiconductor field-effect transistors (MOSFETs) is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-$k$ gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-$k$ gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.
%K Threshold voltage
%K MOSFET
%K conformal mapping
%K fringing field<br>门限电压模型
%K MOSFET
%K 弥散场效应
%K 共形映射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51EC29F0F1FE4796B78156D257FBEBEA&yid=A732AF04DDA03BB3&vid=7801E6FC5AE9020C&iid=B31275AF3241DB2D&sid=43E2C08889D1FABC&eid=2614904FCB8D3A68&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=18