%0 Journal Article
%T STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures<br>STM study of In nanostructures formation on Ge（001） surface at different coverages and temperatures
%A Qin Zhi-Hui
%A Shi Dong-Xi
%A Pang Shi-Jin
%A Gao Hong-Jun
%A <br>秦志辉
%A 时东霞
%A 庞世瑾
%A 高鸿钧
%J 中国物理 B
%D 2008
%I 
%X Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320\du\ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{\{}103{\}}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.
%K scanning tunnelling microscopy
%K surface structures
%K Ge
%K In<br>扫描显微术
%K 表面结构
%K Ge
%K In
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=9CC8E748C4812C0A8E80C7AC7AED04A9&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=38B194292C032A66&sid=309A221A57FE8496&eid=A326383D2F3B3AB0&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=29