%0 Journal Article
%T Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction
%A Lu Hong-Xi
%A Dong Zheng-Chao
%A Fu Hao
%A <br>陆红霞
%A 董正超
%A 付 浩
%J 中国物理 B
%D 2008
%I 
%X Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the rough-scattering effect and spin-flip effect.
%K magnetoresistance
%K spin-flip effect
%K rough-scattering<br>磁致电阻
%K 自旋翻转效应
%K 粗糙面反射
%K 电磁学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6e709dc38fa1d09a4b578dd0906875b5b44d4d294832bb8e&cid=47ea7cfddebb28e0&jid=cd8d6a6897b9334f09d8d1648c376fb4&aid=a852e42a76058049e72943efa65d9d36&yid=67289aff6305e306&vid=bca2697f357f2001&iid=0b39a22176ce99fb&sid=34d13857b558254e&eid=47122ba7be181c5a&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0