%0 Journal Article
%T Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system
%A Chen Miao-Gen
%A Xie Jian-Ping
%A Jin Jin-Sheng
%A Xia A-Gen
%A Ye Gao-Xiang
%A <br>陈苗根
%A 谢建平
%A 金进生
%A 夏阿根
%A 叶高翔
%J 中国物理 B
%D 2008
%I 
%X A nearly free sustained copper (Cu) film system has been successfully fabricated by thermal evaporation deposition of Cu atoms on silicone oil surfaces, and a characteristic ordered pattern has been systematically studied. The ordered pattern, namely, band, is composed of a large number of parallel key-formed domains with different width $w$ but nearly uniform length $L$; its characteristic values of $w$ and $L$ are very susceptible to the growth period, deposition rate and nominal film thickness. The formation mechanism of the ordered patterns is well explained in terms of the relaxation of the internal stress in the films, which is related to the nearly zero adhesion of the solid-liquid interface. By using a two-time deposition method, it is confirmed that the ordered patterns really form in the vacuum chamber.
%K ordered pattern
%K thin film
%K internal stress<br>有序模式
%K 薄膜技术
%K 内部压力
%K 铜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=FEE86BDDC9079AFBC7568FBFA1D75501&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=0B39A22176CE99FB&sid=B10D796AE1B3FEBD&eid=B28C697BC3A1BA62&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0