%0 Journal Article
%T Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques<br>
%A Xue Shu-Wen
%A Zu Xiao-Tao
%A Shao Le-Xi
%A Yuan Zhao-Lin
%A Xiang Xia
%A Deng Hong
%A <br>
%J 中国物理 B
%D 2008
%I 
%X We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol--gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600\du\ have converted to p-type conduction with a hole concentration of $1.6\times1018cm-3, a hole mobility of 3.67cm2/V.s and a minimum resistivity of 4.80cm.\Omega$. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600\du. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.
%K ZnO
%K ion implantation
%K XRD<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=7B96E0DFA853A26EED0BD92EFF35A200&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=B31275AF3241DB2D&sid=5FB7C0C0E567492A&eid=2C502C9A2A834A49&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0