%0 Journal Article
%T Fabrication of ZnO nanowire-based diodes and their light-emitting properties<br>ZnO纳米线二极管发光器件制备及特性研究
%A Wang Yan-Xin
%A Zhang Qi-Feng
%A Sun Hui
%A Chang Yan-Ling
%A Wu Jin-Lei
%A <br>王艳新
%A 张琦锋
%A 孙 晖
%A 常艳玲
%A 吴锦雷
%J 中国物理 B
%D 2008
%I 
%X A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392nm, and the other at the visible 525nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.
%K ZnO nanowire
%K Schottky type diode
%K electroluminescence<br>ZnO纳米线，
%K 肖特基二极管，
%K 电致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=1DBB76CED5E4C753CF88B5B812ED05BB&yid=67289AFF6305E306&vid=BCA2697F357F2001&iid=0B39A22176CE99FB&sid=39B73ADA6F3DD05F&eid=EEBB803F60D7DC4B&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0