%0 Journal Article
%T Si1Sb2Te3 phase change material for chalcogenide random access memory
%A Zhang Ting
%A Song Zhi-Tang
%A Liu Bo
%A Liu Wei-Li
%A Feng Song-Lin
%A Chen Bomy
%A <br>张 挺
%A 宋志棠
%A 刘 波
%A 刘卫丽
%A 封松林
%A 陈邦明
%J 中国物理 B
%D 2007
%I 
%X This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current--voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155~mA, which is smaller than the value 0.31~mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at \sim 180℃ and changes to hexagonal structure at \sim 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3film was studied by four-point probe method. Data retention of the films was characterized as well.
%K phase change
%K chalcogenide random access memory
%K Si--Sb--Te<br>相位变化
%K 随机存取记忆
%K Si-Sb-Te
%K 无定形相位
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51EC29F0F1FE47968609F36E510A0DEE&yid=A732AF04DDA03BB3&vid=7801E6FC5AE9020C&iid=5D311CA918CA9A03&sid=1FE3C1A20D3620BE&eid=2768654D5F8E2AA3&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=28