%0 Journal Article
%T Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system
%A He Bin
%A Chen Guang-Hu
%A Zhu Xiu-Hong
%A Zhang Wen-Li
%A Ding Yi
%A Ma Zhan-Jie
%A Gao Zhi-Hu
%A Song Xue-Mei
%A Deng Jin-Xiang
%A <br>何斌
%A 陈光华
%A 朱秀红
%A 张文理
%A 丁毅
%A 马占杰
%A 郜志华
%A 宋雪梅
%A 邓金祥
%J 中国物理 B
%D 2006
%I 
%X Intrinsic hydrogenated microcrystalline silicon (\muc-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (HW-MWECR-CVD) under different deposition conditions. Fourier-transform infrared spectra and Raman spectra were measured. Optical band gap was determined by Tauc plots, and experiments of photo-induced degradation were performed. It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)). With the rise of crystallinity in the films, the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically. The samples, were identified as \mu c-Si:H films, by calculating the optical band gap. It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material, which promotes the heterogeneous solid-state phase transition characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the needed structure can be prepared by balancing deposition and crystallization through controlling process parameters.
%K HW-MWECR-CVD
%K \mu$c-Si:H
%K hydrogen dilution
%K heterogeneous solid-state phase transition<br>氢化微晶硅薄膜
%K HW-MWECR-CVD
%K 氢稀释
%K 薄膜物理学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=E93793C2561538416EA204F0514048A4&yid=37904DC365DD7266&vid=23CCDDCD68FFCC2F&iid=E158A972A605785F&sid=9C230FD2B3A7F308&eid=1F8584045E0BED57&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=25