%0 Journal Article
%T Analytical analysis of surface potential for grooved-gate MOSFET
%A Zhang Xiao-Ju
%A Gong Xin
%A Wang Jun-Ping
%A Hao Yue
%A <br>张晓菊
%A 龚欣
%A 王俊平
%A 郝跃
%J 中国物理 B
%D 2006
%I 
%X The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $\theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity.
%K surface potential
%K corner effect
%K grooved-gate MOSFET<br>表面位势
%K 晶体管
%K 锐角效应
%K 分析模型
%K 二维Poisson方程
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=DF580B4D8F6DDC70CC44DD89D32269B8&yid=37904DC365DD7266&vid=23CCDDCD68FFCC2F&iid=38B194292C032A66&sid=250DF325A002B9CC&eid=20C9FB8C7B4A22AD&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=10