%0 Journal Article
%T Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs<br>
%A Tang Xiao-Yan
%A Zhang Yi-Men
%A Zhang Yu-Ming
%A Gao Jin-Xia
%A <br>
%J 中国物理 B
%D 2004
%I 
%K 6H-SiC
%K Schottky contact
%K sidewall
%K MOSFET<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=2902C4D5B64BF8C625AA95E9BB5F67CA&yid=D0E58B75BFD8E51C&vid=FC0714F8D2EB605D&iid=DF92D298D3FF1E6E&sid=CEBE8025959B35C7&eid=0EFDF9DD0F63E842&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0