%0 Journal Article
%T Analytical model of electron transport characteristics for 4H-SiC material and devices<br>
%J 中国物理 B
%D 2004
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=1AE41E7D337324962F233396C5D4D4D1&yid=D0E58B75BFD8E51C&vid=FC0714F8D2EB605D&iid=DF92D298D3FF1E6E&sid=D7B9DD9E919B6180&eid=17FE7A1C78626A81&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0